TY - GEN
T1 - Analyzing losses using junction temperature of 300V 2.4kW 96% efficient, 1MHz GaN synchronous boost converter
AU - Hughes, Brian
AU - Lazar, James
AU - Hulsey, Stephen
AU - Garrido, Austin
AU - Zehnder, Daniel
AU - Musni, Marcel
AU - Chu, Rongming
AU - Boutros, Karim
PY - 2013
Y1 - 2013
N2 - New techniques for measuring and analyzing losses in GaN power converters are presented. A 2.4kW synchronous boost converter, switching 300V at 1MHz with normally-off, AlN-base gate, AlGaN/GaN HFETs [1], serves as a vehicle to substantiate the results. An infrared camera is utilized to accurately measure temperatures of the upper and lower switches, as a function of switched current. These temperature measurements are correlated to loss in the respective switches, utilizing temperature data obtained via DC loss measurements. The higher temperature observed in the lower switch results from the switching loss in that switch, and is clearly evident in the thermal images. Analysis of the temperature dependence exposes the loss due to dynamic on-resistance and the switching loss. The extracted parameters accurately model both the efficiency and junction temperatures versus switching current.
AB - New techniques for measuring and analyzing losses in GaN power converters are presented. A 2.4kW synchronous boost converter, switching 300V at 1MHz with normally-off, AlN-base gate, AlGaN/GaN HFETs [1], serves as a vehicle to substantiate the results. An infrared camera is utilized to accurately measure temperatures of the upper and lower switches, as a function of switched current. These temperature measurements are correlated to loss in the respective switches, utilizing temperature data obtained via DC loss measurements. The higher temperature observed in the lower switch results from the switching loss in that switch, and is clearly evident in the thermal images. Analysis of the temperature dependence exposes the loss due to dynamic on-resistance and the switching loss. The extracted parameters accurately model both the efficiency and junction temperatures versus switching current.
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U2 - 10.1109/WiPDA.2013.6695579
DO - 10.1109/WiPDA.2013.6695579
M3 - Conference contribution
AN - SCOPUS:84893539514
SN - 9781479911943
T3 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
SP - 131
EP - 134
BT - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013 - Proceedings
T2 - 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2013
Y2 - 27 October 2013 through 29 October 2013
ER -