TY - JOUR
T1 - Angle of incidence effects in a molecular solid
AU - Ryan, Kathleen E.
AU - Smiley, Edward J.
AU - Winograd, Nicholas
AU - Garrison, Barbara J.
N1 - Funding Information:
The authors would like to thank the Chemistry Division of the National Science Foundation Grant No. CHE-0456514 and CHE-0555314 for its financial support as well as the Academic Services and Emerging Technologies (ASET) group at Pennsylvania State University for their computing support.
PY - 2008/12/15
Y1 - 2008/12/15
N2 - We investigate the influence of the angle of incidence on the sputter yield when bombarding molecular solid, benzene, with C 60 . Our simulations show that at normal incidence, essentially all of the projectile energy is deposited into the substrate within ∼2.5 nm of the surface. However, at 75° incident angle, only 35% of the projectile energy is deposited within a depth of less than 1.5 nm of the surface while 65% of the projectile energy is reflected. Therefore, important aspects of the collision process which are dependent upon energy deposition, such as sputter yield, ejection depth, and molecule dissociation, may change as the incident angle changes.
AB - We investigate the influence of the angle of incidence on the sputter yield when bombarding molecular solid, benzene, with C 60 . Our simulations show that at normal incidence, essentially all of the projectile energy is deposited into the substrate within ∼2.5 nm of the surface. However, at 75° incident angle, only 35% of the projectile energy is deposited within a depth of less than 1.5 nm of the surface while 65% of the projectile energy is reflected. Therefore, important aspects of the collision process which are dependent upon energy deposition, such as sputter yield, ejection depth, and molecule dissociation, may change as the incident angle changes.
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U2 - 10.1016/j.apsusc.2008.05.112
DO - 10.1016/j.apsusc.2008.05.112
M3 - Article
AN - SCOPUS:55349100137
SN - 0169-4332
VL - 255
SP - 844
EP - 846
JO - Applied Surface Science
JF - Applied Surface Science
IS - 4
ER -