Abstract
Angular distributions of Al+ and Ga+ ions desorbed by keV particle bombardment have been measured from a modified AlxGa(1-x)As {001} (2 × 4) surface reconstruction. This surface was prepared from the GaAs{001} c(4 × 4) surface by deposition of one monolayer of aluminum in situ via molecular beam epitaxy. The surface was then annealed to 550 K producing a (2 × 4) reconstruction. By comparing experimental angular distribution results with molecular dynamics simulations of the bombardment process, we show that Al and Ga segregate into different layers of the prepared (2 × 4) surface.
Original language | English (US) |
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Pages (from-to) | 44-49 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 387 |
Issue number | 1-3 |
DOIs | |
State | Published - Oct 8 1997 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry