Angle-resolved SIMS studies of AlxGa(1-x)As {001} (2x4) surface reconstruction

S. H. Goss; P. B.S. Kodali; B. J. Garrison; N. Winograd

doi:10.1016/S0039-6028(97)00235-5

Angle-resolved SIMS studies of Al_xGa_(1-x)As {001} (2x4) surface reconstruction

S. H. Goss, P. B.S. Kodali, B. J. Garrison, N. Winograd

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2 Scopus citations

Abstract

Angular distributions of Al⁺ and Ga⁺ ions desorbed by keV particle bombardment have been measured from a modified Al_xGa_(1-x)As {001} (2 × 4) surface reconstruction. This surface was prepared from the GaAs{001} c(4 × 4) surface by deposition of one monolayer of aluminum in situ via molecular beam epitaxy. The surface was then annealed to 550 K producing a (2 × 4) reconstruction. By comparing experimental angular distribution results with molecular dynamics simulations of the bombardment process, we show that Al and Ga segregate into different layers of the prepared (2 × 4) surface.

Original language	English (US)
Pages (from-to)	44-49
Number of pages	6
Journal	Surface Science
Volume	387
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(97)00235-5
State	Published - Oct 8 1997

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(97)00235-5

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title = "Angle-resolved SIMS studies of AlxGa(1-x)As {001} (2x4) surface reconstruction",

abstract = "Angular distributions of Al+ and Ga+ ions desorbed by keV particle bombardment have been measured from a modified AlxGa(1-x)As {001} (2 × 4) surface reconstruction. This surface was prepared from the GaAs{001} c(4 × 4) surface by deposition of one monolayer of aluminum in situ via molecular beam epitaxy. The surface was then annealed to 550 K producing a (2 × 4) reconstruction. By comparing experimental angular distribution results with molecular dynamics simulations of the bombardment process, we show that Al and Ga segregate into different layers of the prepared (2 × 4) surface.",

author = "Goss, {S. H.} and Kodali, {P. B.S.} and Garrison, {B. J.} and N. Winograd",

note = "Funding Information: We thank J.S. Burnhamf or helpful discussions regardingth iswork. The financiasl upportfo r this work was provided by the National Science Foundatioann dthe Office of Naval ResearchT. he MD calculationws ere performedo n an IBM RS 6000c omputerp, urchasewd ith a NSF instrumentation Grant and the IBM SUR program.",

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doi = "10.1016/S0039-6028(97)00235-5",

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T1 - Angle-resolved SIMS studies of AlxGa(1-x)As {001} (2x4) surface reconstruction

AU - Goss, S. H.

AU - Kodali, P. B.S.

AU - Garrison, B. J.

AU - Winograd, N.

N1 - Funding Information: We thank J.S. Burnhamf or helpful discussions regardingth iswork. The financiasl upportfo r this work was provided by the National Science Foundatioann dthe Office of Naval ResearchT. he MD calculationws ere performedo n an IBM RS 6000c omputerp, urchasewd ith a NSF instrumentation Grant and the IBM SUR program.

PY - 1997/10/8

Y1 - 1997/10/8

N2 - Angular distributions of Al+ and Ga+ ions desorbed by keV particle bombardment have been measured from a modified AlxGa(1-x)As {001} (2 × 4) surface reconstruction. This surface was prepared from the GaAs{001} c(4 × 4) surface by deposition of one monolayer of aluminum in situ via molecular beam epitaxy. The surface was then annealed to 550 K producing a (2 × 4) reconstruction. By comparing experimental angular distribution results with molecular dynamics simulations of the bombardment process, we show that Al and Ga segregate into different layers of the prepared (2 × 4) surface.

AB - Angular distributions of Al+ and Ga+ ions desorbed by keV particle bombardment have been measured from a modified AlxGa(1-x)As {001} (2 × 4) surface reconstruction. This surface was prepared from the GaAs{001} c(4 × 4) surface by deposition of one monolayer of aluminum in situ via molecular beam epitaxy. The surface was then annealed to 550 K producing a (2 × 4) reconstruction. By comparing experimental angular distribution results with molecular dynamics simulations of the bombardment process, we show that Al and Ga segregate into different layers of the prepared (2 × 4) surface.

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Angle-resolved SIMS studies of Al_xGa_(1-x)As {001} (2x4) surface reconstruction

Abstract

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