Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}

D. Srivastava, B. J. Garrison, D. W. Brenner

Research output: Contribution to journalArticlepeer-review

65 Scopus citations

Abstract

The initial stages of the epitaxial growth on the dimer-reconstructed Si{100} surface is modeled via molecular-dynamics simulations using the Tersoff many-body potential. We report a novel anisotropic spread of surface dimer openings in the direction perpendicular to the original dimer rows. This correlated reaction mechanism dramatically increases the crystal-growth process in one direction as confirmed by recent scanning-tunneling-microscope studies.

Original languageEnglish (US)
Pages (from-to)302-305
Number of pages4
JournalPhysical review letters
Volume63
Issue number3
DOIs
StatePublished - 1989

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}'. Together they form a unique fingerprint.

Cite this