Annealing behavior and electrical properties of atomic layer deposited PbTiO3 and PZT films

Jung In Yang; Aaron Welsh; Nick M. Sbrockey; Gary S. Tompa; Ronald G. Polcawich; Daniel M. Potrepka; Susan Trolier-McKinstry

doi:10.1016/j.jcrysgro.2018.04.004

Annealing behavior and electrical properties of atomic layer deposited PbTiO₃ and PZT films

Jung In Yang
, Aaron Welsh
, Nick M. Sbrockey
, Gary S. Tompa
, Ronald G. Polcawich
, Daniel M. Potrepka
, Susan Trolier-McKinstry

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The annealing behavior and electrical properties of lead titanate (PTO) and lead zirconate titanate (PZT) thin films deposited by atomic layer deposition (ALD) were investigated. ALD films were deposited on platinized silicon substrates. The composition of the PTO films ranged from Pb-deficient Pb_0.73TiO_3−x to Pb-rich Pb_2.3TiO_3−x, including stoichiometric PbTiO₃. The PZT films were all Pb-deficient, with Pb/(Zr + Ti) ratios of 0.40–0.75. Stoichiometric PbTiO₃ films showed the perovskite structure, and a well-defined, dense microstructure after crystallization at 600 °C for 1 min in 2 slpm O₂ in a rapid thermal annealer (RTA). Pb excess PbTiO₃ films developed into perovskite PbTiO₃ after annealing but the surface microstructure showed a large grained microstructure with significant porosity. The dielectric constant was 140 at 10 kHz and a ferroelectric polarization – electric field curve was observed. A Pb-deficient Pb_0.66Zr_0.55Ti_0.45O_3−x film showed a dense and fine-grained microstructure after annealing at 700 °C for 1 min in 2 slpm O₂ in a rapid thermal annealer (RTA). The dielectric constant was 100 at 10 kHz.

Original language	English (US)
Pages (from-to)	45-50
Number of pages	6
Journal	Journal of Crystal Growth
Volume	493
DOIs	https://doi.org/10.1016/j.jcrysgro.2018.04.004
State	Published - Jul 1 2018

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2018.04.004

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title = "Annealing behavior and electrical properties of atomic layer deposited PbTiO3 and PZT films",

abstract = "The annealing behavior and electrical properties of lead titanate (PTO) and lead zirconate titanate (PZT) thin films deposited by atomic layer deposition (ALD) were investigated. ALD films were deposited on platinized silicon substrates. The composition of the PTO films ranged from Pb-deficient Pb0.73TiO3−x to Pb-rich Pb2.3TiO3−x, including stoichiometric PbTiO3. The PZT films were all Pb-deficient, with Pb/(Zr + Ti) ratios of 0.40–0.75. Stoichiometric PbTiO3 films showed the perovskite structure, and a well-defined, dense microstructure after crystallization at 600 °C for 1 min in 2 slpm O2 in a rapid thermal annealer (RTA). Pb excess PbTiO3 films developed into perovskite PbTiO3 after annealing but the surface microstructure showed a large grained microstructure with significant porosity. The dielectric constant was 140 at 10 kHz and a ferroelectric polarization – electric field curve was observed. A Pb-deficient Pb0.66Zr0.55Ti0.45O3−x film showed a dense and fine-grained microstructure after annealing at 700 °C for 1 min in 2 slpm O2 in a rapid thermal annealer (RTA). The dielectric constant was 100 at 10 kHz.",

author = "Yang, \{Jung In\} and Aaron Welsh and Sbrockey, \{Nick M.\} and Tompa, \{Gary S.\} and Polcawich, \{Ronald G.\} and Potrepka, \{Daniel M.\} and Susan Trolier-McKinstry",

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doi = "10.1016/j.jcrysgro.2018.04.004",

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T1 - Annealing behavior and electrical properties of atomic layer deposited PbTiO3 and PZT films

AU - Yang, Jung In

AU - Welsh, Aaron

AU - Sbrockey, Nick M.

AU - Tompa, Gary S.

AU - Polcawich, Ronald G.

AU - Potrepka, Daniel M.

AU - Trolier-McKinstry, Susan

PY - 2018/7/1

Y1 - 2018/7/1

N2 - The annealing behavior and electrical properties of lead titanate (PTO) and lead zirconate titanate (PZT) thin films deposited by atomic layer deposition (ALD) were investigated. ALD films were deposited on platinized silicon substrates. The composition of the PTO films ranged from Pb-deficient Pb0.73TiO3−x to Pb-rich Pb2.3TiO3−x, including stoichiometric PbTiO3. The PZT films were all Pb-deficient, with Pb/(Zr + Ti) ratios of 0.40–0.75. Stoichiometric PbTiO3 films showed the perovskite structure, and a well-defined, dense microstructure after crystallization at 600 °C for 1 min in 2 slpm O2 in a rapid thermal annealer (RTA). Pb excess PbTiO3 films developed into perovskite PbTiO3 after annealing but the surface microstructure showed a large grained microstructure with significant porosity. The dielectric constant was 140 at 10 kHz and a ferroelectric polarization – electric field curve was observed. A Pb-deficient Pb0.66Zr0.55Ti0.45O3−x film showed a dense and fine-grained microstructure after annealing at 700 °C for 1 min in 2 slpm O2 in a rapid thermal annealer (RTA). The dielectric constant was 100 at 10 kHz.

AB - The annealing behavior and electrical properties of lead titanate (PTO) and lead zirconate titanate (PZT) thin films deposited by atomic layer deposition (ALD) were investigated. ALD films were deposited on platinized silicon substrates. The composition of the PTO films ranged from Pb-deficient Pb0.73TiO3−x to Pb-rich Pb2.3TiO3−x, including stoichiometric PbTiO3. The PZT films were all Pb-deficient, with Pb/(Zr + Ti) ratios of 0.40–0.75. Stoichiometric PbTiO3 films showed the perovskite structure, and a well-defined, dense microstructure after crystallization at 600 °C for 1 min in 2 slpm O2 in a rapid thermal annealer (RTA). Pb excess PbTiO3 films developed into perovskite PbTiO3 after annealing but the surface microstructure showed a large grained microstructure with significant porosity. The dielectric constant was 140 at 10 kHz and a ferroelectric polarization – electric field curve was observed. A Pb-deficient Pb0.66Zr0.55Ti0.45O3−x film showed a dense and fine-grained microstructure after annealing at 700 °C for 1 min in 2 slpm O2 in a rapid thermal annealer (RTA). The dielectric constant was 100 at 10 kHz.

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EP - 50

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Annealing behavior and electrical properties of atomic layer deposited PbTiO₃ and PZT films

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