Annealing of Reactive ion Etching Plasma-Exposed Thin Oxides

High temperature anneals have been used in an attempt to remove reactive ion etching plasma exposure induced damage in thin oxides and at SiO2-Si interfaces and to restore the charge to breakdown reliability of these thin oxides. A 900°C anneal in forming gas for 1 h was found to be able to remove most of the etch-induced oxide charge and SiO2-Si interface states; however, it was not able to fully restore the charge to breakdown value of the plasma-damaged oxide back to that of an unexposed control oxide. The effects of annealing ambient on oxide charge to breakdown have also been examined.