Annealing of Reactive ion Etching Plasma-Exposed Thin Oxides

Tieer Gu, O. O. Awadelkarim, S. J. Fonash, J. F. Rembetski, Y. D. Chan

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


High temperature anneals have been used in an attempt to remove reactive ion etching plasma exposure induced damage in thin oxides and at SiO2-Si interfaces and to restore the charge to breakdown reliability of these thin oxides. A 900°C anneal in forming gas for 1 h was found to be able to remove most of the etch-induced oxide charge and SiO2-Si interface states; however, it was not able to fully restore the charge to breakdown value of the plasma-damaged oxide back to that of an unexposed control oxide. The effects of annealing ambient on oxide charge to breakdown have also been examined.

Original languageEnglish (US)
Pages (from-to)606-609
Number of pages4
JournalJournal of the Electrochemical Society
Issue number2
StatePublished - Feb 1995

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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