Anodization of sputtered metallic films: The microstructural connection

Tanushree H. Choudhury; Srinivasan Raghavan

doi:10.1016/j.scriptamat.2015.04.017

Anodization of sputtered metallic films: The microstructural connection

Tanushree H. Choudhury, Srinivasan Raghavan

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A simple microstructural rationale for successful anodization of metallic films into ordered oxide nanostructures has been identified. It applies to three of the most commonly studied systems, Zr, Ti and Al films and can be extended to other such oxides. A dense Zone T or II microstructure, in sputtered films, is the most critical ingredient. While T_substrate > 0.3T_melting is the simplest route, pressure and plasma heating can also be exploited. Such microstructures are also associated with a unique growth stress signature.

Original language	English (US)
Pages (from-to)	18-21
Number of pages	4
Journal	Scripta Materialia
Volume	105
DOIs	https://doi.org/10.1016/j.scriptamat.2015.04.017
State	Published - Aug 1 2015

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2015.04.017

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AB - A simple microstructural rationale for successful anodization of metallic films into ordered oxide nanostructures has been identified. It applies to three of the most commonly studied systems, Zr, Ti and Al films and can be extended to other such oxides. A dense Zone T or II microstructure, in sputtered films, is the most critical ingredient. While Tsubstrate > 0.3Tmelting is the simplest route, pressure and plasma heating can also be exploited. Such microstructures are also associated with a unique growth stress signature.

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Anodization of sputtered metallic films: The microstructural connection

Abstract

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