Anomalous domain wall magnetoresistance in ultrathin manganite films near M-I transition boundary

Qi Li; H. S. Wang

Anomalous domain wall magnetoresistance in ultrathin manganite films near M-I transition boundary

Qi Li, H. S. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

Resistance and magnetoresistance in compressively strained epitaxial Pr_2/3Sr_1/3MnO₃ (PSMO) ultrathin films have been studied. The samples were first demagnetized in different ways so that different magnetic structures were created, such as random domain and single domain states. Very large difference in resistance in zero applied magnetic field was observed between different states. The large change of resistance between states is attributed to spin-dependent scattering at the domain walls. We have shown for the first time that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be explained by the double-exchange model.

Original language	English (US)
Pages (from-to)	231-234
Number of pages	4
Journal	Journal of Superconductivity
Volume	14
Issue number	2
State	Published - 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Physics and Astronomy (miscellaneous)

Cite this

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title = "Anomalous domain wall magnetoresistance in ultrathin manganite films near M-I transition boundary",

abstract = "Resistance and magnetoresistance in compressively strained epitaxial Pr2/3Sr1/3MnO3 (PSMO) ultrathin films have been studied. The samples were first demagnetized in different ways so that different magnetic structures were created, such as random domain and single domain states. Very large difference in resistance in zero applied magnetic field was observed between different states. The large change of resistance between states is attributed to spin-dependent scattering at the domain walls. We have shown for the first time that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be explained by the double-exchange model.",

author = "Qi Li and Wang, {H. S.}",

note = "Funding Information: The authors appreciate X. X. Xi, M. Rubinstein, K. Liu, C. L. Chien, Y. Suzuki, X. W. Wu, and M. S. Rzchowski for valuable discussions, and D. Schlom and T. E. Mallouk for helps in X-ray diffraction experiment. This work is partially supported by NSF DMR-9876266, DMR-9972973, and Petroleum Research Fund.",

year = "2001",

language = "English (US)",

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journal = "Journal of Superconductivity",

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TY - JOUR

T1 - Anomalous domain wall magnetoresistance in ultrathin manganite films near M-I transition boundary

AU - Li, Qi

AU - Wang, H. S.

N1 - Funding Information: The authors appreciate X. X. Xi, M. Rubinstein, K. Liu, C. L. Chien, Y. Suzuki, X. W. Wu, and M. S. Rzchowski for valuable discussions, and D. Schlom and T. E. Mallouk for helps in X-ray diffraction experiment. This work is partially supported by NSF DMR-9876266, DMR-9972973, and Petroleum Research Fund.

PY - 2001

Y1 - 2001

N2 - Resistance and magnetoresistance in compressively strained epitaxial Pr2/3Sr1/3MnO3 (PSMO) ultrathin films have been studied. The samples were first demagnetized in different ways so that different magnetic structures were created, such as random domain and single domain states. Very large difference in resistance in zero applied magnetic field was observed between different states. The large change of resistance between states is attributed to spin-dependent scattering at the domain walls. We have shown for the first time that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be explained by the double-exchange model.

AB - Resistance and magnetoresistance in compressively strained epitaxial Pr2/3Sr1/3MnO3 (PSMO) ultrathin films have been studied. The samples were first demagnetized in different ways so that different magnetic structures were created, such as random domain and single domain states. Very large difference in resistance in zero applied magnetic field was observed between different states. The large change of resistance between states is attributed to spin-dependent scattering at the domain walls. We have shown for the first time that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be explained by the double-exchange model.

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Anomalous domain wall magnetoresistance in ultrathin manganite films near M-I transition boundary

Abstract

All Science Journal Classification (ASJC) codes

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