TY - GEN
T1 - Anomalous evolution of bubbles in krypton-implanted SiO2
AU - Assaf, Hannan
AU - Ntsoenzok, Esidor
AU - Barthe, Marie France
AU - Leoni, Elisa
AU - Ruault, Marie Odile
AU - Ashok, S.
PY - 2007
Y1 - 2007
N2 - Thermally grown SiO2 was implanted at room temperature with 220keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to obtain a comprehensive characterization of defects (vacancies, interstitital, bubbles, and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM are a consequence of the interaction between Kr and vacancies (V), with VnKr m, complexes created in the entire of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strong desorption of Kr and the decrease in vacancy concentration.
AB - Thermally grown SiO2 was implanted at room temperature with 220keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to obtain a comprehensive characterization of defects (vacancies, interstitital, bubbles, and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM are a consequence of the interaction between Kr and vacancies (V), with VnKr m, complexes created in the entire of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strong desorption of Kr and the decrease in vacancy concentration.
UR - http://www.scopus.com/inward/record.url?scp=45749105079&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=45749105079&partnerID=8YFLogxK
U2 - 10.1557/proc-0994-f06-04
DO - 10.1557/proc-0994-f06-04
M3 - Conference contribution
AN - SCOPUS:45749105079
SN - 9781558999541
T3 - Materials Research Society Symposium Proceedings
SP - 125
EP - 130
BT - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
PB - Materials Research Society
T2 - Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
Y2 - 9 April 2007 through 13 April 2007
ER -