Abstract
Resolution better than 0.5 μm using optical lithography is dependent upon two critical processes: antireflection coatings (ARCs) and planarization. The merits and shortcomings of two general types of ARCs are discussed, and planarization techniques are reviewed with emphasis on planarization over an entire exposure field.
| Original language | English (US) |
|---|---|
| Pages | 57-62 |
| Number of pages | 6 |
| Volume | 34 |
| No | 11 |
| Specialist publication | Solid State Technology |
| State | Published - Nov 1991 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry