Antireflection properties and solar cell application of silicon nanostructures

Huihui Yue, Rui Jia, Chen Chen, Wuchang Ding, Yanlong Meng, Deqi Wu, Dawei Wu, Wei Chen, Xinyu Liu, Zhi Jin, Wenwu Wang, Tianchun Ye

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Silicon nanowire (Si NW) arrays were fabricated on polished and pyramids textured mono-crystalline Si (mc-Si) using an aqueous chemical etching method. The Si NWs and a hybrid texture of NWs and pyramids both show strong anti-reflectance properties in the wavelength region of 300-1000 nm, with the minimum average reflectance of 2.52% and 8%, respectively. The above two nanostructures were fabricated on mc-Si solar cells with the area of 125×125mm2. Then the influences of Si NWs and hybrid textures on the performances of mc-Si solar cells created using different fabrication processes were analyzed by internal quantum efficiency measurement and by systematical comparisons of efficiency, filling factor, open circuit voltage and short-circuit current. Passivation is found to be essential for the hybrid textured solar cells, and the average open circuit voltage can be improved by 7% after a passivation layer was deposited. The short circuit current could be increased when Si NWs were fabricated on a substrate with an initial PN junction.

Original languageEnglish (US)
Article number031208
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number3
StatePublished - May 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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