@article{0c00bb571b6b4e78a861723a8eb9e121,
title = "Antireflection properties and solar cell application of silicon nanostructures",
abstract = "Silicon nanowire (Si NW) arrays were fabricated on polished and pyramids textured mono-crystalline Si (mc-Si) using an aqueous chemical etching method. The Si NWs and a hybrid texture of NWs and pyramids both show strong anti-reflectance properties in the wavelength region of 300-1000 nm, with the minimum average reflectance of 2.52\% and 8\%, respectively. The above two nanostructures were fabricated on mc-Si solar cells with the area of 125×125mm2. Then the influences of Si NWs and hybrid textures on the performances of mc-Si solar cells created using different fabrication processes were analyzed by internal quantum efficiency measurement and by systematical comparisons of efficiency, filling factor, open circuit voltage and short-circuit current. Passivation is found to be essential for the hybrid textured solar cells, and the average open circuit voltage can be improved by 7\% after a passivation layer was deposited. The short circuit current could be increased when Si NWs were fabricated on a substrate with an initial PN junction.",
author = "Huihui Yue and Rui Jia and Chen Chen and Wuchang Ding and Yanlong Meng and Deqi Wu and Dawei Wu and Wei Chen and Xinyu Liu and Zhi Jin and Wenwu Wang and Tianchun Ye",
note = "Funding Information: This work was subsidized by the 973 Projects under Grant No. 2009CB939703, by the Chinese NSF under Grant Nos. 60706023, 60676001, 90401002, 60977050, and 90607022, and under the Chinese Academy of solar energy action plan. TABLE I. Group samples with different fabrication processes. Group \# Pyramids The first P -diffusion NW The second P -diffusion SiN x C w/o w/o √ √ √ D w/o √ √ √ √ E √ w/o √ √ w/o F √ w/o √ √ √ G √ √ √ √ √ FIG. 1. (a) Silver films on substrate A after being etched for 2 h. (b) The silver particles at the bottom of the nanowires. (c) Cross-section view of the Ag removed nanowires of substrate A etched for 2 h. (d) The top view of substrate A etched for 3 h. (e) The top view of substrate B etched for 0.5 h and (f) for 3 h. FIG. 2. (Color online) Relationship of Si nanowire arrays length versus etching duration. The red dotted line is the linear fit relationship. FIG. 3. (Color online) (a) and (b) Reflectance of substrates A and B etched for different times, respectively. FIG. 4. (Color online) (a) Transmission and absorption of substrate A etched for 4 h and pyramids textured Si. (b) The reflectance of nanowire arrays on substrate A in 300–1600 nm wavelengths. FIG. 5. (Color online) (a) Normalized value of V o c , I s c , FF and η for different Groups sample. (b) The comparison of IQE of Groups C and D. (c) The comparison of IQE of Groups E, F, and G. ",
year = "2011",
month = may,
doi = "10.1116/1.3591344",
language = "English (US)",
volume = "29",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "3",
}