Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As

R. C. Myers; B. L. Sheu; A. W. Jackson; A. C. Gossard; P. Schiffer; N. Samarth; D. D. Awschalom

doi:10.1103/PhysRevB.74.155203

Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As

R. C. Myers, B. L. Sheu, A. W. Jackson, A. C. Gossard, P. Schiffer, N. Samarth, D. D. Awschalom

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51 Scopus citations

Abstract

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from TC p0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

Original language	English (US)
Article number	155203
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	74
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.74.155203
State	Published - 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.74.155203

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title = "Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As",

abstract = "We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from TC p0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.",

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T1 - Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As

AU - Myers, R. C.

AU - Sheu, B. L.

AU - Jackson, A. W.

AU - Gossard, A. C.

AU - Schiffer, P.

AU - Samarth, N.

AU - Awschalom, D. D.

PY - 2006

Y1 - 2006

N2 - We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from TC p0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

AB - We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from TC p0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

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Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As

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