Applications of advanced transmission electron microscopy techniques in gate stack scaling

Susanne Stemmer; James M. LeBeau; Joël Cagnon; Yoontae Hwang; Roman Engel-Herbert

Applications of advanced transmission electron microscopy techniques in gate stack scaling

Susanne Stemmer, James M. LeBeau, Joël Cagnon, Yoontae Hwang, Roman Engel-Herbert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Advanced gate dielectric stacks are comprised of multiple layers of different materials, including high-k gate dielectrics, high-mobility semiconductor channels, metal gate electrodes and interfacial layers with sub-nanometer thickness. The composition, point defect chemistry, interface atomic structure and interaction between the layers determine the properties of novel gate stacks. This paper reviews recent applications of advanced transmission electron microscopy techniques to determine the atomic structure and defects in advanced gate stacks.

Original language	English (US)
Title of host publication	2009 Symposium on VLSI Technology, VLSIT 2009
Pages	198-199
Number of pages	2
State	Published - 2009
Event	2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: Jun 16 2009 → Jun 18 2009

Other

Other	2009 Symposium on VLSI Technology, VLSIT 2009
Country/Territory	Japan
City	Kyoto
Period	6/16/09 → 6/18/09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "Applications of advanced transmission electron microscopy techniques in gate stack scaling",

abstract = "Advanced gate dielectric stacks are comprised of multiple layers of different materials, including high-k gate dielectrics, high-mobility semiconductor channels, metal gate electrodes and interfacial layers with sub-nanometer thickness. The composition, point defect chemistry, interface atomic structure and interaction between the layers determine the properties of novel gate stacks. This paper reviews recent applications of advanced transmission electron microscopy techniques to determine the atomic structure and defects in advanced gate stacks.",

author = "Susanne Stemmer and LeBeau, {James M.} and Jo{\"e}l Cagnon and Yoontae Hwang and Roman Engel-Herbert",

year = "2009",

language = "English (US)",

isbn = "9784863480094",

pages = "198--199",

booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",

note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",

}

TY - GEN

T1 - Applications of advanced transmission electron microscopy techniques in gate stack scaling

AU - Stemmer, Susanne

AU - LeBeau, James M.

AU - Cagnon, Joël

AU - Hwang, Yoontae

AU - Engel-Herbert, Roman

PY - 2009

Y1 - 2009

N2 - Advanced gate dielectric stacks are comprised of multiple layers of different materials, including high-k gate dielectrics, high-mobility semiconductor channels, metal gate electrodes and interfacial layers with sub-nanometer thickness. The composition, point defect chemistry, interface atomic structure and interaction between the layers determine the properties of novel gate stacks. This paper reviews recent applications of advanced transmission electron microscopy techniques to determine the atomic structure and defects in advanced gate stacks.

AB - Advanced gate dielectric stacks are comprised of multiple layers of different materials, including high-k gate dielectrics, high-mobility semiconductor channels, metal gate electrodes and interfacial layers with sub-nanometer thickness. The composition, point defect chemistry, interface atomic structure and interaction between the layers determine the properties of novel gate stacks. This paper reviews recent applications of advanced transmission electron microscopy techniques to determine the atomic structure and defects in advanced gate stacks.

UR - http://www.scopus.com/inward/record.url?scp=71049146356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71049146356&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:71049146356

SN - 9784863480094

SP - 198

EP - 199

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

T2 - 2009 Symposium on VLSI Technology, VLSIT 2009

Y2 - 16 June 2009 through 18 June 2009

ER -

Applications of advanced transmission electron microscopy techniques in gate stack scaling

Abstract

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All Science Journal Classification (ASJC) codes

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