Approaches to designing thermally stable Schottky contacts to n-GaN

H. S. Venugopalan; S. E. Mohney; J. M. DeLucca; R. J. Molnar

doi:10.1088/0268-1242/14/9/303

Approaches to designing thermally stable Schottky contacts to n-GaN

H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, R. J. Molnar

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16 Scopus citations

Abstract

The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.

Original language	English (US)
Pages (from-to)	757-761
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	14
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/14/9/303
State	Published - Sep 1 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Approaches to designing thermally stable Schottky contacts to n-GaN",

abstract = "The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.",

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T1 - Approaches to designing thermally stable Schottky contacts to n-GaN

AU - Venugopalan, H. S.

AU - Mohney, S. E.

AU - DeLucca, J. M.

AU - Molnar, R. J.

PY - 1999/9/1

Y1 - 1999/9/1

N2 - The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.

AB - The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.

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AN - SCOPUS:0033189904

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SP - 757

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 9

ER -

Approaches to designing thermally stable Schottky contacts to n-GaN

Abstract

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