Approaches to designing thermally stable Schottky contacts to n-GaN

H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, R. J. Molnar

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights were determined as a function of annealing temperature. It was shown that stoichiometric PdIn contacts were more stable than Pd-only contacts. Similarly, Ni/Ga/Ni diodes were found to be more stable than Ni diodes. Both the Ni/Ga/Ni contact and the elemental Re contact were stable on short-term annealing up to 700°C.

Original languageEnglish (US)
Pages (from-to)757-761
Number of pages5
JournalSemiconductor Science and Technology
Issue number9
StatePublished - Sep 1 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Approaches to designing thermally stable Schottky contacts to n-GaN'. Together they form a unique fingerprint.

Cite this