Approaches to modifying solid phase crystallization kinetics for a-Si films

Reece Kingi, Yaozu Wang, Stephen Fonash, Osama Awadelkarim, Yuan Min Li

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Three approaches to modifying the solid phase crystallization kinetics of amorphous silicon thin films are examined with the goal of reducing the thermal budget and improving the poly-Si quality for thin film transistor applications. The three approaches consist of (1) variations in the PECVD a-Si deposition parameters; (2) the application of pre-furnace-anneal surface treatments; and (3) using both rapid thermal annealing and furnace annealing at different temperatures. We also examine the synergism among these approaches. Results reveal that (1) film deposition dilution and dilution/temperature changes do not strongly affect crystallization time, but do affect grain size; (2) pre-anneal surface treatments can dramatically reduce the solid phase crystallization thermal budget for diluted films and act synergistically with deposition dilution or dilution/temperature effects; and (3) rapid thermal annealing leads to different crystallization kinetics from that seen for furnace annealing.

Original languageEnglish (US)
Pages (from-to)249-254
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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