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Argon-ion implantation damage studies in silicon Schottky barriers using anodic oxidation/etching
H. C. Chien, S. Ashok
Engineering Science and Mechanics
Materials Research Institute (MRI)
Research output
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Contribution to journal
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Article
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peer-review
19
Scopus citations
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Dive into the research topics of 'Argon-ion implantation damage studies in silicon Schottky barriers using anodic oxidation/etching'. Together they form a unique fingerprint.
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Keyphrases
Schottky Barrier
100%
Si Surface
100%
Damage Study
100%
Anodic Oxidation
100%
Argon Ions
100%
Ion Implantation Damage
100%
Low Temperature
50%
Electrical Properties
50%
Ar Ions
50%
Metallization
50%
Ion Implantation
50%
Schottky
50%
Schottky Diode
50%
Ion Bombardment
50%
Surface Layer
50%
I-V Characteristics
50%
Surface Barrier
50%
Schottky Barrier Height
50%
High-resolution Electron Microscopy
50%
Ion Damage
50%
Material Science
Silicon
100%
Oxidation Reaction
100%
Schottky Barrier
100%
Ion Implantation
100%
High-Resolution Transmission Electron Microscopy
50%
Schottky Diode
50%
Current-Voltage Characteristic
50%