TY - JOUR
T1 - Assessing the Impact of Defects on Lead-Free Perovskite-Inspired Photovoltaics via Photoinduced Current Transient Spectroscopy
AU - Pecunia, Vincenzo
AU - Zhao, Jing
AU - Kim, Chaewon
AU - Tuttle, Blair R.
AU - Mei, Jianjun
AU - Li, Fengzhu
AU - Peng, Yueheng
AU - Huq, Tahmida N.
AU - Hoye, Robert L.Z.
AU - Kelly, Nicola D.
AU - Dutton, Siân E.
AU - Xia, Kai
AU - MacManus-Driscoll, Judith L.
AU - Sirringhaus, Henning
N1 - Funding Information:
V.P. acknowledges financial support from the National Natural Science Foundation of China (61950410759 and 61805166), the Jiangsu Province Natural Science Foundation (BK20170345), the Collaborative Innovation Center of Suzhou Nano Science & Technology, the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), the 111 Project, and the Joint International Research Laboratory of Carbon‐Based Functional Materials and Devices. R.L.Z.H. acknowledges support from the Royal Academy of Engineering via the Research Fellowship program (RF\201718\1701). J.L.M.‐D. thanks the Royal Academy of Engineering grant, CiET, 1819_24. The authors are thankful to Vladimir Kremnican for his technical support with the PICTS apparatus.
Publisher Copyright:
© 2021 The Authors. Advanced Energy Materials published by Wiley-VCH GmbH
PY - 2021/6/10
Y1 - 2021/6/10
N2 - The formidable rise of lead-halide perovskite photovoltaics has energized the search for lead-free perovskite-inspired materials (PIMs) with related optoelectronic properties but free from toxicity limitations. The photovoltaic performance of PIMs closely depends on their defect tolerance. However, a comprehensive experimental characterization of their defect-level parameters—concentration, energy depth, and capture cross-section—has not been pursued to date, hindering the rational development of defect-tolerant PIMs. While mainstream, capacitance-based techniques for defect-level characterization have sparked controversy in lead-halide perovskite research, their use on PIMs is also problematic due to their typical near-intrinsic character. This study demonstrates on four representative PIMs (Cs3Sb2I9, Rb3Sb2I9, BiOI, and AgBiI4) for which Photoinduced Current Transient Spectroscopy (PICTS) offers a facile, widely applicable route to the defect-level characterization of PIMs embedded within solar cells. Going beyond the ambiguities of the current discussion of defect tolerance, a methodology is also presented to quantitatively assess the defect tolerance of PIMs in photovoltaics based on their experimental defect-level parameters. Finally, PICTS applied to PIM photovoltaics is revealed to be ultimately sensitive to defect-level concentrations <1 ppb. Therefore, this study provides a versatile platform for the defect-level characterization of PIMs and related absorbers, which can catalyze the development of green, high-performance photovoltaics.
AB - The formidable rise of lead-halide perovskite photovoltaics has energized the search for lead-free perovskite-inspired materials (PIMs) with related optoelectronic properties but free from toxicity limitations. The photovoltaic performance of PIMs closely depends on their defect tolerance. However, a comprehensive experimental characterization of their defect-level parameters—concentration, energy depth, and capture cross-section—has not been pursued to date, hindering the rational development of defect-tolerant PIMs. While mainstream, capacitance-based techniques for defect-level characterization have sparked controversy in lead-halide perovskite research, their use on PIMs is also problematic due to their typical near-intrinsic character. This study demonstrates on four representative PIMs (Cs3Sb2I9, Rb3Sb2I9, BiOI, and AgBiI4) for which Photoinduced Current Transient Spectroscopy (PICTS) offers a facile, widely applicable route to the defect-level characterization of PIMs embedded within solar cells. Going beyond the ambiguities of the current discussion of defect tolerance, a methodology is also presented to quantitatively assess the defect tolerance of PIMs in photovoltaics based on their experimental defect-level parameters. Finally, PICTS applied to PIM photovoltaics is revealed to be ultimately sensitive to defect-level concentrations <1 ppb. Therefore, this study provides a versatile platform for the defect-level characterization of PIMs and related absorbers, which can catalyze the development of green, high-performance photovoltaics.
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U2 - 10.1002/aenm.202003968
DO - 10.1002/aenm.202003968
M3 - Article
AN - SCOPUS:85104990735
SN - 1614-6832
VL - 11
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 22
M1 - 2003968
ER -