Assessment of ECR argon plasma etching damage on Si and SiO2 interfaces

C. W. Nam, S. Ashok, W. Tsai, M. E. Day

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Electron cyclotron resonance (ECR) argon plasma has been used to etch the native oxide on Si and thermal SiO2. The Schottky barrier height modification on both n- and p-Si has been studied as a function of substrate bias and etch time. Deep Level Transient Spectroscopy (DLTS) measurements show clear peaks on both p- and n-Si, but with low levels of trap concentrations (1012-1013 cm-3), and decreasing with depth from the surface. The effects of thermal oxide etching on the Si/SiO2 interface have been estimated with MOS capacitors. Negative flat-voltage shift is observed after argon plasma exposure, which removes the thermal oxide at a rate of over 100 angstrom/min at 50 V bias. C-V measurements show an order of magnitude increase in interface trap density.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Number of pages6
ISBN (Print)1558991743
StatePublished - 1993
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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