Assessment of ECR argon plasma etching damage on Si and SiO₂ interfaces

Keyphrases

• Silica 100%
• Argon Plasma 100%
• Thermal Oxide 100%
• Electron Cyclotron Resonance 100%
• Etching Damage 100%
• Order of Magnitude 50%
• Native Oxide 50%
• Plasma Exposure 50%
• MOS Capacitor 50%
• Deep Level Transient Spectroscopy 50%
• Cm(III) 50%
• Angstrom 50%
• Interface Traps 50%
• Spectroscopic Measurement 50%
• N-Si 50%
• Si-SiO2 Interface 50%
• Oxide Etching 50%
• Voltage Shift 50%
• Schottky Barrier Height 50%
• Substrate Bias 50%
• C-V Measurement 50%

Physics

• Electron Cyclotron Resonance 100%
• Argon Plasma 100%
• Plasma Etching 100%
• Transients 33%
• Schottky Barrier Height 33%

Material Science

• Oxide Compound 100%
• Plasma Etching 100%
• Density 33%
• Capacitor 33%
• Schottky Barrier 33%
• Deep-Level Transient Spectroscopy 33%