Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions

Yuxuan Lin, Qiong Ma, Pin Chun Shen, Batyr Ilyas, Yaqing Bie, Albert Liao, Emre Ergeçen, Bingnan Han, Nannan Mao, Xu Zhang, Xiang Ji, Yuhao Zhang, Jihao Yin, Shengxi Huang, Mildred Dresselhaus, Nuh Gedik, Pablo Jarillo-Herrero, Xi Ling, Jing Kong, Tomás Palacios

Research output: Contribution to journalArticlepeer-review

44 Scopus citations


The massless Dirac electron transport in graphene has led to a variety of unique light-matter interaction phenomena, which promise many novel optoelectronic applications. Most of the effects are only accessible by breaking the spatial symmetry, through introducing edges, p-n junctions, or heterogeneous interfaces. The recent development of direct synthesis of lateral heterostructures offers new opportunities to achieve the desired asymmetry. As a proof of concept, we study the photothermoelectric effect in an asymmetric lateral heterojunction between the Dirac semimetallic monolayer graphene and the parabolic semiconducting monolayer MoS2. Very different hot-carrier cooling mechanisms on the graphene and the MoS2 sides allow us to resolve the asymmetric thermalization pathways of photoinduced hot carriers spatially with electrostatic gate tunability. We also demonstrate the potential of graphene-2D semiconductor lateral heterojunctions as broadband infrared photodetectors. The proposed structure shows an extreme in-plane asymmetry and provides a new platform to study light-matter interactions in low-dimensional systems.

Original languageEnglish (US)
Article numbereaav1493
JournalScience Advances
Issue number6
StatePublished - Jun 14 2019

All Science Journal Classification (ASJC) codes

  • General


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