Asymmetrically doped FinFETs for low-power robust SRAMs

Keyphrases

• Fin Field-effect Transistor (FinFET) 100%
• Low Power 100%
• 6T-SRAM 42%
• Cell Leakage 28%
• Read Static Noise Margin 28%
• Device Characteristics 14%
• Access Time 14%
• Doping Concentration 14%
• Device Structure 14%
• Short Channel 14%
• Channel Characteristics 14%
• Low Doping Concentration 14%
• Reduced Electric Field 14%
• Write Margin 14%
• Drain Bias 14%
• Writing Time 14%
• Asymmetric Source 14%
• TFET SRAMs 14%

Engineering

• Noise Margin 100%
• Electric Field 50%
• Access Time 50%
• Key Difference 50%
• Drain Bias 50%
• Device Structure 50%