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Atomic displacement effects in single-event gate rupture
Matthew J. Beck
,
Blair R. Tuttle
, Ronald D. Schrimpf
, Daniel M. Fleetwood
, Sokrates T. Pantelides
School of Science (Behrend)
Research output
:
Contribution to journal
›
Article
›
peer-review
28
Scopus citations
Overview
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Keyphrases
Swift Heavy Ions
100%
Single-event Gate Rupture
100%
Displacement Effect
100%
Soft Breakdown
66%
Gate Capacitance
33%
SRIM 2008
33%
Thermal Spike
33%
Material Science
Oxide Compound
100%
Density
50%
Electrical Resistivity
50%
Capacitance
50%
Percolation
50%
Engineering
Defects
100%
Electronic State
25%
Energy Gap
25%
Free Parameter
25%
Scale Dynamic
25%
Stored Energy
25%
Electrical Effect
25%
Gate Capacitance
25%
Physics
Heavy Ion
100%
Physical Process
33%
Quantum Mechanical Calculations
33%
Percolation
33%