TY - GEN
T1 - Atomic insights into material removal mechanisms in si and cu chemical mechanical polishing processes
T2 - 2017 International Conference on Planarization/CMP Technology, ICPT 2017
AU - Wen, Jialin
AU - Ma, Tianbao
AU - Lu, Xinchun
AU - Zhang, Weiwei
AU - van Duin, Adri C.T.
N1 - Publisher Copyright:
© VDE VERLAG GMBH Berlin Offenbach
PY - 2017
Y1 - 2017
N2 - In this work, material removal mechanisms in Si and Cu chemical mechanical polishing processes are investigated using molecular dynamics simulations based on ReaxFF reactive force field. In the Si CMP process, the Si-Si bonds and Si-O-Si bonds of the Si substrate can be broken when they are connected to the silica surface through interfacial bridge bonds under the interfacial shear effects. Higher pressure leads to the removal of more Si atoms due to the formation of more interfacial bridge bonds. In the Cu CMP process, H2O, H2O2, glycine and silica surface can interact with the Cu surface, leading to the oxidation of Cu atoms and extrusion of these Cu atoms from the Cu surface, under the interfacial sliding process, these Cu atoms can be sheared off from the Cu surface.
AB - In this work, material removal mechanisms in Si and Cu chemical mechanical polishing processes are investigated using molecular dynamics simulations based on ReaxFF reactive force field. In the Si CMP process, the Si-Si bonds and Si-O-Si bonds of the Si substrate can be broken when they are connected to the silica surface through interfacial bridge bonds under the interfacial shear effects. Higher pressure leads to the removal of more Si atoms due to the formation of more interfacial bridge bonds. In the Cu CMP process, H2O, H2O2, glycine and silica surface can interact with the Cu surface, leading to the oxidation of Cu atoms and extrusion of these Cu atoms from the Cu surface, under the interfacial sliding process, these Cu atoms can be sheared off from the Cu surface.
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M3 - Conference contribution
AN - SCOPUS:85096774766
T3 - ICPT 2017 - International Conference on Planarization/CMP Technology
SP - 174
EP - 176
BT - ICPT 2017 - International Conference on Planarization/CMP Technology
PB - VDE Verlag GmbH
Y2 - 11 October 2017 through 13 October 2017
ER -