Skip to main navigation
Skip to search
Skip to main content
Penn State Home
Help & FAQ
Home
Researchers
Research output
Research units
Equipment
Grants & Projects
Prizes
Activities
Search by expertise, name or affiliation
Atomic insights into material removal mechanisms in si and cu chemical mechanical polishing processes: ReaxFF reactive molecular dynamics simulations
Jialin Wen
, Tianbao Ma
, Xinchun Lu
, Weiwei Zhang
,
Adri C.T. van Duin
Mechanical Engineering
Institute of Energy and the Environment (IEE)
Materials Computation Center
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
2
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Atomic insights into material removal mechanisms in si and cu chemical mechanical polishing processes: ReaxFF reactive molecular dynamics simulations'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Atomic Insights
100%
Chemical Mechanical Polishing
100%
CMP Process
66%
Cu Atoms
100%
Cu Surface
100%
Extrusion
33%
Glycine
33%
High Pressure
33%
Hydrogen Peroxide
33%
Interfacial Shear
33%
Interfacial Sliding
33%
Material Removal Mechanism
100%
Molecular Dynamics Simulation
33%
Polishing Process
100%
Reactive Molecular Dynamics
100%
ReaxFF Molecular Dynamics
100%
ReaxFF Reactive Force Field
33%
Shear Effect
33%
Si Substrate
33%
Silica Surface
66%
Simulation-based
33%
Sliding Process
33%
Work Material
33%
Engineering
Chemical Mechanical Polishing
100%
Computer Simulation
100%
Cu Surface
100%
Material Removal Mechanism
100%
Polishing Process
100%
Si Substrate
33%
Si-Si Bond
33%
Silicon Dioxide
66%
Material Science
Chemical Mechanical Planarization
100%
Hydrogen Peroxide
20%
Oxidation Reaction
20%
Silicon Dioxide
40%
Surface (Surface Science)
100%