Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors

Nick M. Sbrockey; Gary S. Tompa; Robert Lavelle; Kathleen A. Trumbull; Mark A. Fanton; David W. Snyder; Ronald G. Polcawich; Daniel M. Potrepka

doi:10.1116/1.5014030

Atomic layer deposition of PbTiO₃ and PbZr_xTi_1-xO₃ films using metal alkyl and alkylamide precursors

Nick M. Sbrockey, Gary S. Tompa, Robert Lavelle, Kathleen A. Trumbull, Mark A. Fanton, David W. Snyder, Ronald G. Polcawich, Daniel M. Potrepka

Applied Research Laboratory (ARL)

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Atomic layer deposition (ALD) processes were demonstrated for lead-titanate (PbTiO₃) and lead-zirconium-titanate (PZT) films. The metal organic precursors were tetraethyl lead Pb(Et)₄ reacted with ozone; along with tetrakis ethylmethylamino zirconium and tetrakis dimethylamino titanium reacted with either water or ozone. These precursors were selected based on compatibility with ALD processes for the component oxides. Single oxide films of PbO, ZrO₂, and TiO₂ were easily deposited using the selected precursors. ALD of the complex oxide films was done by combining the ALD processes for the component oxide films. The compositions of Pb, Zr, and Ti in the films could be predictably controlled by the relative ratio of Pb, Zr, and Ti precursor doses during the ALD process, and controlled composition for both PbTiO₃ and PZT films was demonstrated.

Original language	English (US)
Article number	031509
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	36
Issue number	3
DOIs	https://doi.org/10.1116/1.5014030
State	Published - May 2 2018

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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@article{7ff8144144544da0906fbebef22d292f,

title = "Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors",

abstract = "Atomic layer deposition (ALD) processes were demonstrated for lead-titanate (PbTiO3) and lead-zirconium-titanate (PZT) films. The metal organic precursors were tetraethyl lead Pb(Et)4 reacted with ozone; along with tetrakis ethylmethylamino zirconium and tetrakis dimethylamino titanium reacted with either water or ozone. These precursors were selected based on compatibility with ALD processes for the component oxides. Single oxide films of PbO, ZrO2, and TiO2 were easily deposited using the selected precursors. ALD of the complex oxide films was done by combining the ALD processes for the component oxide films. The compositions of Pb, Zr, and Ti in the films could be predictably controlled by the relative ratio of Pb, Zr, and Ti precursor doses during the ALD process, and controlled composition for both PbTiO3 and PZT films was demonstrated.",

author = "Sbrockey, {Nick M.} and Tompa, {Gary S.} and Robert Lavelle and Trumbull, {Kathleen A.} and Fanton, {Mark A.} and Snyder, {David W.} and Polcawich, {Ronald G.} and Potrepka, {Daniel M.}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = may,

day = "2",

doi = "10.1116/1.5014030",

language = "English (US)",

volume = "36",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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TY - JOUR

T1 - Atomic layer deposition of PbTiO3 and PbZrxTi1-xO3 films using metal alkyl and alkylamide precursors

AU - Sbrockey, Nick M.

AU - Tompa, Gary S.

AU - Lavelle, Robert

AU - Trumbull, Kathleen A.

AU - Fanton, Mark A.

AU - Snyder, David W.

AU - Polcawich, Ronald G.

AU - Potrepka, Daniel M.

PY - 2018/5/2

Y1 - 2018/5/2

N2 - Atomic layer deposition (ALD) processes were demonstrated for lead-titanate (PbTiO3) and lead-zirconium-titanate (PZT) films. The metal organic precursors were tetraethyl lead Pb(Et)4 reacted with ozone; along with tetrakis ethylmethylamino zirconium and tetrakis dimethylamino titanium reacted with either water or ozone. These precursors were selected based on compatibility with ALD processes for the component oxides. Single oxide films of PbO, ZrO2, and TiO2 were easily deposited using the selected precursors. ALD of the complex oxide films was done by combining the ALD processes for the component oxide films. The compositions of Pb, Zr, and Ti in the films could be predictably controlled by the relative ratio of Pb, Zr, and Ti precursor doses during the ALD process, and controlled composition for both PbTiO3 and PZT films was demonstrated.

AB - Atomic layer deposition (ALD) processes were demonstrated for lead-titanate (PbTiO3) and lead-zirconium-titanate (PZT) films. The metal organic precursors were tetraethyl lead Pb(Et)4 reacted with ozone; along with tetrakis ethylmethylamino zirconium and tetrakis dimethylamino titanium reacted with either water or ozone. These precursors were selected based on compatibility with ALD processes for the component oxides. Single oxide films of PbO, ZrO2, and TiO2 were easily deposited using the selected precursors. ALD of the complex oxide films was done by combining the ALD processes for the component oxide films. The compositions of Pb, Zr, and Ti in the films could be predictably controlled by the relative ratio of Pb, Zr, and Ti precursor doses during the ALD process, and controlled composition for both PbTiO3 and PZT films was demonstrated.

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

M1 - 031509

ER -

Atomic layer deposition of PbTiO₃ and PbZr_xTi_1-xO₃ films using metal alkyl and alkylamide precursors

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