Atomic layer deposition of PbTiO₃ and PbZr_xTi_1-xO₃ films using metal alkyl and alkylamide precursors

Atomic layer deposition (ALD) processes were demonstrated for lead-titanate (PbTiO₃) and lead-zirconium-titanate (PZT) films. The metal organic precursors were tetraethyl lead Pb(Et)₄ reacted with ozone; along with tetrakis ethylmethylamino zirconium and tetrakis dimethylamino titanium reacted with either water or ozone. These precursors were selected based on compatibility with ALD processes for the component oxides. Single oxide films of PbO, ZrO₂, and TiO₂ were easily deposited using the selected precursors. ALD of the complex oxide films was done by combining the ALD processes for the component oxide films. The compositions of Pb, Zr, and Ti in the films could be predictably controlled by the relative ratio of Pb, Zr, and Ti precursor doses during the ALD process, and controlled composition for both PbTiO₃ and PZT films was demonstrated.