TY - CHAP
T1 - Atomic-level simulation of ferroelectricity in oxides
T2 - Current status and opportunities
AU - Phillpot, Simon R.
AU - Sinnott, Susan B.
AU - Asthagiri, Aravind
PY - 2007
Y1 - 2007
N2 - Atomic-level simulations are providing powerful insights into the properties of ferroelectric materials. In particular, we illustrate the effect of the strong coupling among the dipole moment, strain, and microstructure (both physical and chemical) in thin films, nanostructures, superlattices, and solid solutions of ferroelectrics. We assess the domain of validity of the atomic-level approach relative to other theoretical and computational approaches. We identify the strengths and weaknesses of the current generation of interatomic potentials and suggest strategies for improving their performance. We also identify application areas in which atomic-level simulation promises to play an important role.
AB - Atomic-level simulations are providing powerful insights into the properties of ferroelectric materials. In particular, we illustrate the effect of the strong coupling among the dipole moment, strain, and microstructure (both physical and chemical) in thin films, nanostructures, superlattices, and solid solutions of ferroelectrics. We assess the domain of validity of the atomic-level approach relative to other theoretical and computational approaches. We identify the strengths and weaknesses of the current generation of interatomic potentials and suggest strategies for improving their performance. We also identify application areas in which atomic-level simulation promises to play an important role.
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U2 - 10.1146/annurev.matsci.37.052506.084206
DO - 10.1146/annurev.matsci.37.052506.084206
M3 - Chapter
AN - SCOPUS:34848883897
SN - 0824317378
SN - 9780824317379
T3 - Annual Review of Materials Research
SP - 239
EP - 270
BT - Annual Review of Materials Research
A2 - Clarke, David
A2 - Ruehle, Manfred
A2 - Gopalan, Venkatraman
ER -