Atomic oxygen and the thermal oxidation of silicon

Andrew M. Hoff; Jerzy Ruzyllo

doi:10.1063/1.99676

Atomic oxygen and the thermal oxidation of silicon

Andrew M. Hoff
, Jerzy Ruzyllo

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

Original language	English (US)
Pages (from-to)	1264-1265
Number of pages	2
Journal	Applied Physics Letters
Volume	52
Issue number	15
DOIs	https://doi.org/10.1063/1.99676
State	Published - Dec 1 1988

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.99676

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title = "Atomic oxygen and the thermal oxidation of silicon",

abstract = "Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.",

author = "Hoff, \{Andrew M.\} and Jerzy Ruzyllo",

year = "1988",

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T1 - Atomic oxygen and the thermal oxidation of silicon

AU - Hoff, Andrew M.

AU - Ruzyllo, Jerzy

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

AB - Both molecular and atomic oxygen have been postulated to react with silicon in the thermal oxidation process. At temperatures below 700 °C very little film growth is observed in molecular oxygen. When silicon is allowed to react thermally with a flowing afterglow containing atomic oxygen an enhancement in film growth is observed. Film growth in this mode exhibits little temperature activation and is speculated to be due to a constant concentration of atomic oxygen.

UR - https://www.scopus.com/pages/publications/12744256398

UR - https://www.scopus.com/pages/publications/12744256398#tab=citedBy

U2 - 10.1063/1.99676

DO - 10.1063/1.99676

M3 - Article

AN - SCOPUS:12744256398

SN - 0003-6951

VL - 52

SP - 1264

EP - 1265

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Atomic oxygen and the thermal oxidation of silicon

Abstract

All Science Journal Classification (ASJC) codes

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