Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry

S. Goss; G. Fisher; P. Kodali; B. Garrison; Nicholas Winograd

doi:10.1103/PhysRevB.59.10662

Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry

S. Goss, G. Fisher, P. Kodali, B. Garrison, Nicholas Winograd

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The atomic structure of the initial Al/GaAs (001) (Formula presented) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of (Formula presented) and (Formula presented) ions to molecular-dynamics simulations of the ion bombardment event.

Original language	English (US)
Pages (from-to)	10662-10669
Number of pages	8
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	59
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.59.10662
State	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.59.10662

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title = "Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry",

abstract = "The atomic structure of the initial Al/GaAs (001) (Formula presented) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of (Formula presented) and (Formula presented) ions to molecular-dynamics simulations of the ion bombardment event.",

author = "S. Goss and G. Fisher and P. Kodali and B. Garrison and Nicholas Winograd",

year = "1999",

doi = "10.1103/PhysRevB.59.10662",

language = "English (US)",

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pages = "10662--10669",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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publisher = "American Physical Society",

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T1 - Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry

AU - Goss, S.

AU - Fisher, G.

AU - Kodali, P.

AU - Garrison, B.

AU - Winograd, Nicholas

PY - 1999

Y1 - 1999

N2 - The atomic structure of the initial Al/GaAs (001) (Formula presented) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of (Formula presented) and (Formula presented) ions to molecular-dynamics simulations of the ion bombardment event.

AB - The atomic structure of the initial Al/GaAs (001) (Formula presented) interface has been examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface reconstruction up to 1.0 ML of deposited Al when prepared in situ via molecular beam epitaxy. The Al atoms are found not to adsorb to first layer As atoms and do not dimerize on this surface. The structure is determined by comparing angular distributions of (Formula presented) and (Formula presented) ions to molecular-dynamics simulations of the ion bombardment event.

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DO - 10.1103/PhysRevB.59.10662

M3 - Article

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VL - 59

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -

Atomic placement of al on the gaas (001) (formula presented) reconstruction determined by angle-resolved secondary-ion mass spectrometry

Abstract

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