@inproceedings{be096a87287d41daa9b0420bb6c6972c,
title = "Atomic relaxation of a junction profile",
abstract = "Nonlinear relaxations of a sharp concentration profile typical in layered semiconductor junctions is investigated using the Path Probability Method (PPM) of irreversible statistical mechanics. Our results show that at the initial stage of the relaxation of a sharp concentration profile, atoms near the junction may diffuse up against the concentration gradient. It is shown that the cause of the uphill diffusion is the repulsion among different species, which is also the physical origin of the square gradient term.",
author = "Royoichi Kikuchi and Chen, {Long Qing} and Arezki Beldjenna",
year = "1994",
language = "English (US)",
isbn = "1558992251",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "407--412",
booktitle = "Growth, Processing, and Characterization of Semiconductor Heterostructures",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}