Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride

Ashley L. Gibb; Nasim Alem; Jian Hao Chen; Kristopher J. Erickson; Jim Ciston; Abhay Gautam; Martin Linck; Alex Zettl

doi:10.1021/ja400637n

Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride

Ashley L. Gibb
, Nasim Alem
, Jian Hao Chen
, Kristopher J. Erickson
, Jim Ciston
, Abhay Gautam
, Martin Linck
, Alex Zettl

Research output: Contribution to journal › Article › peer-review

255 Scopus citations

Abstract

Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.

Original language	English (US)
Pages (from-to)	6758-6761
Number of pages	4
Journal	Journal of the American Chemical Society
Volume	135
Issue number	18
DOIs	https://doi.org/10.1021/ja400637n
State	Published - May 8 2013

All Science Journal Classification (ASJC) codes

Catalysis
General Chemistry
Biochemistry
Colloid and Surface Chemistry

Access to Document

10.1021/ja400637n

Cite this

@article{9eab3dfc2d844917a3fe35563a2c2075,

title = "Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride",

abstract = "Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.",

author = "Gibb, \{Ashley L.\} and Nasim Alem and Chen, \{Jian Hao\} and Erickson, \{Kristopher J.\} and Jim Ciston and Abhay Gautam and Martin Linck and Alex Zettl",

year = "2013",

month = may,

day = "8",

doi = "10.1021/ja400637n",

language = "English (US)",

volume = "135",

pages = "6758--6761",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "18",

}

TY - JOUR

T1 - Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride

AU - Gibb, Ashley L.

AU - Alem, Nasim

AU - Chen, Jian Hao

AU - Erickson, Kristopher J.

AU - Ciston, Jim

AU - Gautam, Abhay

AU - Linck, Martin

AU - Zettl, Alex

PY - 2013/5/8

Y1 - 2013/5/8

N2 - Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.

AB - Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.

UR - https://www.scopus.com/pages/publications/84877255089

UR - https://www.scopus.com/pages/publications/84877255089#tab=citedBy

U2 - 10.1021/ja400637n

DO - 10.1021/ja400637n

M3 - Article

C2 - 23550733

AN - SCOPUS:84877255089

SN - 0002-7863

VL - 135

SP - 6758

EP - 6761

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 18

ER -

Atomic resolution imaging of grain boundary defects in monolayer chemical vapor deposition-grown hexagonal boron nitride

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this