Atomic-scale defects generated in the early/intermediate stages of dielectric breakdown in Si/SiO2transistors

Stephen J. Moxim, Fedor V. Sharov, David R. Hughart, Gaddi S. Haase, Colin G. McKay, Patrick M. Lenahan

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Electrically detected magnetic resonance and near-zero-field magnetoresistance measurements were used to study atomic-scale traps generated during high-field gate stressing in Si/SiO2 MOSFETs. The defects observed are almost certainly important to time-dependent dielectric breakdown. The measurements were made with spin-dependent recombination current involving defects at and near the Si/SiO2 boundary. The interface traps observed are Pb0 and Pb1 centers, which are silicon dangling bond defects. The ratio of Pb0/Pb1 is dependent on the gate stressing polarity. Electrically detected magnetic resonance measurements also reveal generation of E′ oxide defects near the Si/SiO2 interface. Near-zero-field magnetoresistance measurements made throughout stressing reveal that the local hyperfine environment of the interface traps changes with stressing time; these changes are almost certainly due to the redistribution of hydrogen near the interface.

Original languageEnglish (US)
Article number063502
JournalApplied Physics Letters
Volume120
Issue number6
DOIs
StatePublished - Feb 7 2022

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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