Atomic scale defects in 4H SiC/SiO2 using electron spin resonance

Aaron Rape; P. M. Lenahan; A. J. Lelis

doi:10.1109/ISDRS.2007.4422484

Atomic scale defects in 4H SiC/SiO₂ using electron spin resonance

Aaron Rape, P. M. Lenahan, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422484
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 12/14/07

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422484

Cite this

@inproceedings{b932dc7f645c4fffa551f1ce7357960c,

title = "Atomic scale defects in 4H SiC/SiO2 using electron spin resonance",

author = "Aaron Rape and Lenahan, {P. M.} and Lelis, {A. J.}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422484",

language = "English (US)",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Rape, A, Lenahan, PM & Lelis, AJ 2007, Atomic scale defects in 4H SiC/SiO₂ using electron spin resonance. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422484, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422484

TY - GEN

T1 - Atomic scale defects in 4H SiC/SiO2 using electron spin resonance

AU - Rape, Aaron

AU - Lenahan, P. M.

AU - Lelis, A. J.

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949202570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949202570&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422484

DO - 10.1109/ISDRS.2007.4422484

M3 - Conference contribution

AN - SCOPUS:44949202570

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -