Atomic scale defects in the Si/SiON system and the negative bias temperature instability

Patrick M. Lenahan

Atomic scale defects in the Si/SiON system and the negative bias temperature instability

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO ₂-SiON systems which are likely involved in the negative bias temperature instability.

Original language	English (US)
Title of host publication	2004 International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	299-302
Number of pages	4
State	Published - Aug 31 2004
Event	2004 International Conference on Integrated Circuit Design and Technology, ICICDT - Austin, TX, United States Duration: May 17 2004 → May 20 2004

Other

Other	2004 International Conference on Integrated Circuit Design and Technology, ICICDT
Country/Territory	United States
City	Austin, TX
Period	5/17/04 → 5/20/04

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Atomic scale defects in the Si/SiON system and the negative bias temperature instability",

abstract = "This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO 2-SiON systems which are likely involved in the negative bias temperature instability.",

author = "Lenahan, {Patrick M.}",

year = "2004",

month = aug,

day = "31",

language = "English (US)",

isbn = "0780385284",

pages = "299--302",

booktitle = "2004 International Conference on Integrated Circuit Design and Technology, ICICDT",

note = "2004 International Conference on Integrated Circuit Design and Technology, ICICDT ; Conference date: 17-05-2004 Through 20-05-2004",

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T1 - Atomic scale defects in the Si/SiON system and the negative bias temperature instability

AU - Lenahan, Patrick M.

PY - 2004/8/31

Y1 - 2004/8/31

N2 - This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO 2-SiON systems which are likely involved in the negative bias temperature instability.

AB - This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO 2-SiON systems which are likely involved in the negative bias temperature instability.

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M3 - Conference contribution

AN - SCOPUS:4143126538

SN - 0780385284

SN - 9780780385283

SP - 299

EP - 302

BT - 2004 International Conference on Integrated Circuit Design and Technology, ICICDT

T2 - 2004 International Conference on Integrated Circuit Design and Technology, ICICDT

Y2 - 17 May 2004 through 20 May 2004

ER -

Atomic scale defects in the Si/SiON system and the negative bias temperature instability

Abstract

Other

All Science Journal Classification (ASJC) codes

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