For quite some time, it has been known that two types of silicon dangling bond centers play important roles in metal-oxide-silicon reliability problems. Silicon dangling bonds at the Si/SiO2 boundary defects (called P b centers) dominate Si/SiO2 interface trapping. Silicon dangling bond defects (called E′ centers) dominate deep levels in the oxide. Recent observations provide a more detailed understanding of the relationship between the structure and electronic properties of the P b interface centers. Recent work also helps explain the frequently noted correlation between oxide deep level defects and Si/SiO2 interface trap defects.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering