Atomic scale defects involved in MOS reliability problems

For quite some time, it has been known that two types of silicon dangling bond centers play important roles in metal-oxide-silicon reliability problems. Silicon dangling bonds at the Si/SiO₂ boundary defects (called P _b centers) dominate Si/SiO₂ interface trapping. Silicon dangling bond defects (called E′ centers) dominate deep levels in the oxide. Recent observations provide a more detailed understanding of the relationship between the structure and electronic properties of the P _b interface centers. Recent work also helps explain the frequently noted correlation between oxide deep level defects and Si/SiO₂ interface trap defects.