Atomic scale defects involved in NBTI

J. P. Campbell; P. M. Lenahan; A. T. Krishnan; S. Krishnan

Atomic scale defects involved in NBTI

J. P. Campbell, P. M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Contribution to conference › Paper › peer-review

Abstract

The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P _b0 centers, Si/SiO ₂ interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.

Original language	English (US)
Pages	118-120
Number of pages	3
State	Published - Dec 1 2004
Event	2004 IEEE International Integrated Reliability Workshop Final Report - S. Lake Tahoe, CA, United States Duration: Oct 18 2004 → Oct 21 2004

Other

Other	2004 IEEE International Integrated Reliability Workshop Final Report
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	10/18/04 → 10/21/04

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

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title = "Atomic scale defects involved in NBTI",

abstract = "The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P b0 centers, Si/SiO 2 interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.",

author = "Campbell, {J. P.} and Lenahan, {P. M.} and Krishnan, {A. T.} and S. Krishnan",

year = "2004",

month = dec,

day = "1",

language = "English (US)",

pages = "118--120",

note = "2004 IEEE International Integrated Reliability Workshop Final Report ; Conference date: 18-10-2004 Through 21-10-2004",

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TY - CONF

T1 - Atomic scale defects involved in NBTI

AU - Campbell, J. P.

AU - Lenahan, P. M.

AU - Krishnan, A. T.

AU - Krishnan, S.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P b0 centers, Si/SiO 2 interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.

AB - The atomic scale defect physics responsible for the negative bias temperature instability (NBTI) phenomenon are not well understood. In this study, we use a highly sensitive form of electron spin resonance (ESR) called spin dependent recombination (SDR) to investigate the chemical and physical nature of the defects responsible for NBTI. We show that P b0 centers, Si/SiO 2 interface silicon dangling bond defects, play a major role in the interface state generation process in NBTI.

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UR - http://www.scopus.com/inward/citedby.url?scp=21644489729&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:21644489729

SP - 118

EP - 120

T2 - 2004 IEEE International Integrated Reliability Workshop Final Report

Y2 - 18 October 2004 through 21 October 2004

ER -

Atomic scale defects involved in NBTI

Abstract

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All Science Journal Classification (ASJC) codes

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