Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon

P. M. Lenahan; A. Y. Kang; J. P. Campbell

Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon

P. M. Lenahan
, A. Y. Kang
, J. P. Campbell

Engineering Science and Mechanics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Several recent studies provide strong circumstantial evidence indicating that a specific type of atomic-scale defect plays an important, likely dominating, role in stress induced leakage currents. The defect involves an oxygen deficient silicon dangling bond in the oxide; it is called an E' center.

Original language	English (US)
Pages (from-to)	608-615
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4746 I
State	Published - 2002
Event	Physics of Semiconductor Devices - Delhi, India Duration: Dec 11 2001 → Dec 15 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

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title = "Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon",

abstract = "Several recent studies provide strong circumstantial evidence indicating that a specific type of atomic-scale defect plays an important, likely dominating, role in stress induced leakage currents. The defect involves an oxygen deficient silicon dangling bond in the oxide; it is called an E' center.",

author = "Lenahan, \{P. M.\} and Kang, \{A. Y.\} and Campbell, \{J. P.\}",

year = "2002",

language = "English (US)",

volume = "4746 I",

pages = "608--615",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physics of Semiconductor Devices ; Conference date: 11-12-2001 Through 15-12-2001",

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TY - JOUR

T1 - Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon

AU - Lenahan, P. M.

AU - Kang, A. Y.

AU - Campbell, J. P.

PY - 2002

Y1 - 2002

N2 - Several recent studies provide strong circumstantial evidence indicating that a specific type of atomic-scale defect plays an important, likely dominating, role in stress induced leakage currents. The defect involves an oxygen deficient silicon dangling bond in the oxide; it is called an E' center.

AB - Several recent studies provide strong circumstantial evidence indicating that a specific type of atomic-scale defect plays an important, likely dominating, role in stress induced leakage currents. The defect involves an oxygen deficient silicon dangling bond in the oxide; it is called an E' center.

UR - https://www.scopus.com/pages/publications/0036407216

UR - https://www.scopus.com/pages/publications/0036407216#tab=citedBy

M3 - Conference article

AN - SCOPUS:0036407216

SN - 0277-786X

VL - 4746 I

SP - 608

EP - 615

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics of Semiconductor Devices

Y2 - 11 December 2001 through 15 December 2001

ER -

Atomic scale defects involved in stress induced leakage currents in very thin oxides on silicon

Abstract

All Science Journal Classification (ASJC) codes

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