Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface

P. M. Lenahan; T. D. Mishima; T. N. Fogarty; R. Wilkins

doi:10.1063/1.1418261

Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO₂ interface

P. M. Lenahan, T. D. Mishima, T. N. Fogarty, R. Wilkins

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Abstract

We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO₂ interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap.

Original language	English (US)
Pages (from-to)	3266-3268
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	20
DOIs	https://doi.org/10.1063/1.1418261
State	Published - Nov 12 2001

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1418261

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abstract = "We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap.",

author = "Lenahan, {P. M.} and Mishima, {T. D.} and Fogarty, {T. N.} and R. Wilkins",

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AU - Fogarty, T. N.

AU - Wilkins, R.

PY - 2001/11/12

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N2 - We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap.

AB - We utilize very sensitive magnetic resonance measurements to observe changes in the densities of interface trap centers hundreds of hours after irradiation. Our observations provide direct atomic-scale evidence for slow changes in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of interface states in the silicon band gap.

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Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO₂ interface

Abstract

All Science Journal Classification (ASJC) codes

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