Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu Chuan Lin; Ram Krishna Ghosh; Rafik Addou; Ning Lu; Sarah M. Eichfeld; Hui Zhu; Ming Yang Li; Xin Peng; Moon J. Kim; Lain Jong Li; Robert M. Wallace; Suman Datta; Joshua A. Robinson

doi:10.1038/ncomms8311

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming Yang Li, Xin Peng, Moon J. Kim, Lain Jong Li, Robert M. Wallace, Suman Datta, Joshua A. Robinson

Research output: Contribution to journal › Article › peer-review

376 Scopus citations

Abstract

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS₂), molybdenum diselenide (MoSe₂) and tungsten diselenide (WSe₂). The realization of MoS 2 -WSe 2 -graphene and WSe₂-MoS₂-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Original language	English (US)
Article number	7311
Journal	Nature communications
Volume	6
DOIs	https://doi.org/10.1038/ncomms8311
State	Published - Jun 19 2015

All Science Journal Classification (ASJC) codes

General Chemistry
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy

Access to Document

10.1038/ncomms8311

Cite this

@article{6cd6e00ea1f743c596c6ae614aaeeecf,

title = "Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures",

abstract = "Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS 2 -WSe 2 -graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.",

author = "Lin, {Yu Chuan} and Ghosh, {Ram Krishna} and Rafik Addou and Ning Lu and Eichfeld, {Sarah M.} and Hui Zhu and Li, {Ming Yang} and Xin Peng and Kim, {Moon J.} and Li, {Lain Jong} and Wallace, {Robert M.} and Suman Datta and Robinson, {Joshua A.}",

year = "2015",

month = jun,

day = "19",

doi = "10.1038/ncomms8311",

language = "English (US)",

volume = "6",

journal = "Nature communications",

issn = "2041-1723",

publisher = "Nature Research",

}

TY - JOUR

T1 - Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

AU - Lin, Yu Chuan

AU - Ghosh, Ram Krishna

AU - Addou, Rafik

AU - Lu, Ning

AU - Eichfeld, Sarah M.

AU - Zhu, Hui

AU - Li, Ming Yang

AU - Peng, Xin

AU - Kim, Moon J.

AU - Li, Lain Jong

AU - Wallace, Robert M.

AU - Datta, Suman

AU - Robinson, Joshua A.

PY - 2015/6/19

Y1 - 2015/6/19

N2 - Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS 2 -WSe 2 -graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

AB - Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS 2 -WSe 2 -graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84934964778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84934964778&partnerID=8YFLogxK

U2 - 10.1038/ncomms8311

DO - 10.1038/ncomms8311

M3 - Article

C2 - 26088295

AN - SCOPUS:84934964778

SN - 2041-1723

VL - 6

JO - Nature communications

JF - Nature communications

M1 - 7311

ER -

Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this