Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Yu Chuan Lin, Ram Krishna Ghosh, Rafik Addou, Ning Lu, Sarah M. Eichfeld, Hui Zhu, Ming Yang Li, Xin Peng, Moon J. Kim, Lain Jong Li, Robert M. Wallace, Suman Datta, Joshua A. Robinson

Research output: Contribution to journalArticlepeer-review

357 Scopus citations

Abstract

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalcogenides: molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2). The realization of MoS 2 -WSe 2 -graphene and WSe2-MoS2-graphene heterostructures leads to resonant tunnelling in an atomically thin stack with spectrally narrow, room temperature negative differential resistance characteristics.

Original languageEnglish (US)
Article number7311
JournalNature communications
Volume6
DOIs
StatePublished - Jun 19 2015

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Biochemistry, Genetics and Molecular Biology
  • General Physics and Astronomy

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