Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)

W. Windl; T. Liang; S. Lopatin; G. Duscher

doi:10.1017/s1431927603444139

Atomistic modeling of the detailed structure of Si/SiO₂ interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)

W. Windl
, T. Liang
, S. Lopatin
, G. Duscher

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	826-827
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	9
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/s1431927603444139
State	Published - 2003

All Science Journal Classification (ASJC) codes

Instrumentation

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10.1017/s1431927603444139

Cite this

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title = "Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)",

author = "W. Windl and T. Liang and S. Lopatin and G. Duscher",

year = "2003",

doi = "10.1017/s1431927603444139",

language = "English (US)",

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pages = "826--827",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

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T1 - Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)

AU - Windl, W.

AU - Liang, T.

AU - Lopatin, S.

AU - Duscher, G.

PY - 2003

Y1 - 2003

UR - https://www.scopus.com/pages/publications/0041419682

UR - https://www.scopus.com/pages/publications/0041419682#tab=citedBy

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DO - 10.1017/s1431927603444139

M3 - Article

AN - SCOPUS:0041419682

SN - 1431-9276

VL - 9

SP - 826

EP - 827

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)

All Science Journal Classification (ASJC) codes

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Atomistic modeling of the detailed structure of Si/SiO₂ interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)