Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors

M. Städele; A. Di Carlo; P. Lugli; F. Sacconi; B. Tuttle

Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors

M. Städele, A. Di Carlo, P. Lugli, F. Sacconi, B. Tuttle

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper reviews the basic methodology and highlights advantages and recent applications of atomistic tight-binding calculations for the investigation of carrier transport in extremely scaled SOI transistors. The calculations yield numerous insights into direct and defect-assisted gate oxide tunneling, source-drain transport and tunneling, subband coupling, and carrier quantization in ultrathin-body devices with (possibly strained) Si and SiGe channels. The present results are in very good agreement with the available experimental data and document limitations of the standard effective-mass-based schemes.

Original language	English (US)
Pages (from-to)	229-232
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors",

abstract = "This paper reviews the basic methodology and highlights advantages and recent applications of atomistic tight-binding calculations for the investigation of carrier transport in extremely scaled SOI transistors. The calculations yield numerous insights into direct and defect-assisted gate oxide tunneling, source-drain transport and tunneling, subband coupling, and carrier quantization in ultrathin-body devices with (possibly strained) Si and SiGe channels. The present results are in very good agreement with the available experimental data and document limitations of the standard effective-mass-based schemes.",

author = "M. St{\"a}dele and {Di Carlo}, A. and P. Lugli and F. Sacconi and B. Tuttle",

year = "2003",

language = "English (US)",

pages = "229--232",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

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TY - JOUR

T1 - Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors

AU - Städele, M.

AU - Di Carlo, A.

AU - Lugli, P.

AU - Sacconi, F.

AU - Tuttle, B.

PY - 2003

Y1 - 2003

N2 - This paper reviews the basic methodology and highlights advantages and recent applications of atomistic tight-binding calculations for the investigation of carrier transport in extremely scaled SOI transistors. The calculations yield numerous insights into direct and defect-assisted gate oxide tunneling, source-drain transport and tunneling, subband coupling, and carrier quantization in ultrathin-body devices with (possibly strained) Si and SiGe channels. The present results are in very good agreement with the available experimental data and document limitations of the standard effective-mass-based schemes.

AB - This paper reviews the basic methodology and highlights advantages and recent applications of atomistic tight-binding calculations for the investigation of carrier transport in extremely scaled SOI transistors. The calculations yield numerous insights into direct and defect-assisted gate oxide tunneling, source-drain transport and tunneling, subband coupling, and carrier quantization in ultrathin-body devices with (possibly strained) Si and SiGe channels. The present results are in very good agreement with the available experimental data and document limitations of the standard effective-mass-based schemes.

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M3 - Conference article

AN - SCOPUS:0842288273

SN - 0163-1918

SP - 229

EP - 232

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Atomistic tight-binding calculations for the investigation of transport in extremely scaled SOI transistors

Abstract

All Science Journal Classification (ASJC) codes

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