Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior

Dong Soo Paik; A. V. Prasada Rao; S. Komarneni

doi:10.1023/A:1018312032470

Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior

Dong Soo Paik, A. V. Prasada Rao, S. Komarneni

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Randomly oriented ferroelectric BaTiO₃ and (Ba_0.6Sr_0.4) TiO₃ thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 μC/cm² and a coercive field of 43.4 kV/cm for BaTiO₃ films annealed at 800°C for 1 h. Corresponding parameters for (Ba_0.6Sr_0.4)TiO₃ films annealed at 800°C were found to be 7.2 μC/cm² and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 μm in size. The leakage current for (Ba_0.6Sr_0.4)TiO₃ films was found to be two orders of magnitude lower than that for BaTiO₃ films.

Original language	English (US)
Pages (from-to)	213-220
Number of pages	8
Journal	Journal of Sol-Gel Science and Technology
Volume	10
Issue number	2
DOIs	https://doi.org/10.1023/A:1018312032470
State	Published - 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
General Chemistry
Biomaterials
Condensed Matter Physics
Materials Chemistry

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title = "Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior",

abstract = "Randomly oriented ferroelectric BaTiO3 and (Ba0.6Sr0.4) TiO3 thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 μC/cm2 and a coercive field of 43.4 kV/cm for BaTiO3 films annealed at 800°C for 1 h. Corresponding parameters for (Ba0.6Sr0.4)TiO3 films annealed at 800°C were found to be 7.2 μC/cm2 and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 μm in size. The leakage current for (Ba0.6Sr0.4)TiO3 films was found to be two orders of magnitude lower than that for BaTiO3 films.",

author = "Paik, {Dong Soo} and {Prasada Rao}, {A. V.} and S. Komarneni",

note = "Funding Information: This research was supported by the Division of Materials Research, National Science Foundation under grant No. DMR-9319809.",

year = "1997",

doi = "10.1023/A:1018312032470",

language = "English (US)",

volume = "10",

pages = "213--220",

journal = "Journal of Sol-Gel Science and Technology",

issn = "0928-0707",

publisher = "Springer Netherlands",

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T1 - Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors

T2 - Preparation and Ferroelectric Behavior

AU - Paik, Dong Soo

AU - Prasada Rao, A. V.

AU - Komarneni, S.

N1 - Funding Information: This research was supported by the Division of Materials Research, National Science Foundation under grant No. DMR-9319809.

PY - 1997

Y1 - 1997

N2 - Randomly oriented ferroelectric BaTiO3 and (Ba0.6Sr0.4) TiO3 thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 μC/cm2 and a coercive field of 43.4 kV/cm for BaTiO3 films annealed at 800°C for 1 h. Corresponding parameters for (Ba0.6Sr0.4)TiO3 films annealed at 800°C were found to be 7.2 μC/cm2 and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 μm in size. The leakage current for (Ba0.6Sr0.4)TiO3 films was found to be two orders of magnitude lower than that for BaTiO3 films.

AB - Randomly oriented ferroelectric BaTiO3 and (Ba0.6Sr0.4) TiO3 thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 μC/cm2 and a coercive field of 43.4 kV/cm for BaTiO3 films annealed at 800°C for 1 h. Corresponding parameters for (Ba0.6Sr0.4)TiO3 films annealed at 800°C were found to be 7.2 μC/cm2 and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 μm in size. The leakage current for (Ba0.6Sr0.4)TiO3 films was found to be two orders of magnitude lower than that for BaTiO3 films.

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Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior

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