Backside illuminated high saturation current partially depleted absorber photodetecters

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

A high-saturation-current, backside-illuminated In0.53Ga 0.47As photo-diode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/W at 1.55 μm.

Original languageEnglish (US)
Pages (from-to)1466-1467
Number of pages2
JournalElectronics Letters
Volume39
Issue number20
DOIs
StatePublished - Oct 2 2003

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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