Abstract
A high-saturation-current, backside-illuminated In0.53Ga 0.47As photo-diode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/W at 1.55 μm.
Original language | English (US) |
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Pages (from-to) | 1466-1467 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 39 |
Issue number | 20 |
DOIs | |
State | Published - Oct 2 2003 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering