Backside illuminated high saturation current partially depleted absorber photodetecters

X. Li; S. Demiguel; N. Li; J. C. Campbell; D. L. Tulchinsky; K. J. Williams

doi:10.1049/el:20030927

Backside illuminated high saturation current partially depleted absorber photodetecters

X. Li, S. Demiguel, N. Li, J. C. Campbell, D. L. Tulchinsky, K. J. Williams

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

A high-saturation-current, backside-illuminated In_0.53Ga _0.47As photo-diode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/W at 1.55 μm.

Original language	English (US)
Pages (from-to)	1466-1467
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	20
DOIs	https://doi.org/10.1049/el:20030927
State	Published - Oct 2 2003

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20030927

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title = "Backside illuminated high saturation current partially depleted absorber photodetecters",

abstract = "A high-saturation-current, backside-illuminated In0.53Ga 0.47As photo-diode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/W at 1.55 μm.",

author = "X. Li and S. Demiguel and N. Li and Campbell, \{J. C.\} and Tulchinsky, \{D. L.\} and Williams, \{K. J.\}",

year = "2003",

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doi = "10.1049/el:20030927",

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T1 - Backside illuminated high saturation current partially depleted absorber photodetecters

AU - Li, X.

AU - Demiguel, S.

AU - Li, N.

AU - Campbell, J. C.

AU - Tulchinsky, D. L.

AU - Williams, K. J.

PY - 2003/10/2

Y1 - 2003/10/2

N2 - A high-saturation-current, backside-illuminated In0.53Ga 0.47As photo-diode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/W at 1.55 μm.

AB - A high-saturation-current, backside-illuminated In0.53Ga 0.47As photo-diode with a partially depleted absorber has been fabricated and tested. The 1 dB small-signal compression current was 199 mA at 1 GHz for a 100 μm diameter photodiode. The 1 dB large-signal compression current was 24 mA at 48 GHz for an 8 μm-diameter photodiode. The responsivity was 0.6 A/W at 1.55 μm.

UR - https://www.scopus.com/pages/publications/0142084657

UR - https://www.scopus.com/inward/citedby.url?scp=0142084657&partnerID=8YFLogxK

U2 - 10.1049/el:20030927

DO - 10.1049/el:20030927

M3 - Article

AN - SCOPUS:0142084657

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VL - 39

SP - 1466

EP - 1467

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Backside illuminated high saturation current partially depleted absorber photodetecters

Abstract

All Science Journal Classification (ASJC) codes

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