Balanced InP/InGaAs photodiodes with 1.5-W output power

Qiugui Zhou; Allen S. Cross; Yang Fu; Andreas Beling; Brian M. Foley; Patrick Hopkins; J. C. Campbell

doi:10.1109/JPHOT.2013.2262672

Balanced InP/InGaAs photodiodes with 1.5-W output power

Qiugui Zhou
, Allen S. Cross
, Yang Fu
, Andreas Beling
, Brian M. Foley
, Patrick Hopkins
, J. C. Campbell

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of < 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.

Original language	English (US)
Article number	6515609
Journal	IEEE Photonics Journal
Volume	5
Issue number	3
DOIs	https://doi.org/10.1109/JPHOT.2013.2262672
State	Published - 2013

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JPHOT.2013.2262672

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title = "Balanced InP/InGaAs photodiodes with 1.5-W output power",

abstract = "We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of < 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.",

author = "Qiugui Zhou and Cross, \{Allen S.\} and Yang Fu and Andreas Beling and Foley, \{Brian M.\} and Patrick Hopkins and Campbell, \{J. C.\}",

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language = "English (US)",

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AU - Zhou, Qiugui

AU - Cross, Allen S.

AU - Fu, Yang

AU - Beling, Andreas

AU - Foley, Brian M.

AU - Hopkins, Patrick

AU - Campbell, J. C.

PY - 2013

Y1 - 2013

N2 - We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of < 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.

AB - We report InP/InGaAs modified unitraveling-carrier balanced photodiodes (PDs). The back-illuminated PDs were flip-chip bonded on diamond submounts for enhanced heat sinking. The device demonstrated a 3-dB bandwidth of 8 GHz and a 30-dB common-mode rejection ratio at frequencies of < 10 GHz. High saturation current of > 320 mA, maximum output power of 31.7 dBm (1.5 W) into a 50-Ω load, and good linearity with a third-order intercept point of up to 47 dBm were measured at the 3-dB bandwidth frequency of 8 GHz.

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DO - 10.1109/JPHOT.2013.2262672

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AN - SCOPUS:84878661554

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VL - 5

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

IS - 3

M1 - 6515609

ER -

Balanced InP/InGaAs photodiodes with 1.5-W output power

Abstract

All Science Journal Classification (ASJC) codes

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