TY - JOUR
T1 - Band Alignment of Al2O3on α-(AlxGa1-x)2O3
AU - Xia, Xinyi
AU - Al-Mamun, Nahid Sultan
AU - Fares, Chaker
AU - Haque, Aman
AU - Ren, Fan
AU - Hassa, Anna
AU - Von Wenckstern, Holger
AU - Grundmann, Marius
AU - Pearton, S. J.
N1 - Publisher Copyright:
© 2022 Electrochemical Society Inc.. All rights reserved.
PY - 2022/2
Y1 - 2022/2
N2 - X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26-0.74, corresponding to a bandgap range from 5.8-7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x >0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of-0.07 eV for x = 0.58 and-0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.
AB - X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26-0.74, corresponding to a bandgap range from 5.8-7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x >0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of-0.07 eV for x = 0.58 and-0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.
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U2 - 10.1149/2162-8777/ac546f
DO - 10.1149/2162-8777/ac546f
M3 - Article
AN - SCOPUS:85125721941
SN - 2162-8769
VL - 11
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 2
M1 - 025006
ER -