Band Alignment of Al2O3on α-(AlxGa1-x)2O3

Xinyi Xia, Nahid Sultan Al-Mamun, Chaker Fares, Aman Haque, Fan Ren, Anna Hassa, Holger Von Wenckstern, Marius Grundmann, S. J. Pearton

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X Ray Photoelectron Spectroscopy was used to measure valence band offsets for Al2O3 deposited by Atomic Layer Deposition on α-(AlxGa1-x)2O3 alloys over a wide range of Al contents, x, from 0.26-0.74, corresponding to a bandgap range from 5.8-7 eV. These alloys were grown by Pulsed Laser Deposition. The band alignments were type I (nested) at x >0.5, with valence band offsets 0.13 eV for x = 0.26 and x = 0.46. At higher Al contents, the band alignment was a staggered alignment, with valence band offsets of-0.07 eV for x = 0.58 and-0.17 for x = 0.74, ie. negative valence band offsets in both cases. The conduction band offsets are also small at these high Al contents, being only 0.07 eV at x = 0.74. The wide bandgap of the α-(AlxGa1-x)2O3 alloys makes it difficult to find dielectrics with nested band alignments over the entire composition range.

Original languageEnglish (US)
Article number025006
JournalECS Journal of Solid State Science and Technology
Issue number2
StatePublished - Feb 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials


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