TY - JOUR
T1 - Band type engineering using different stacking configurations of anisotropic and isotropic monolayer transition metal dichalcogenides
AU - Polumati, Gowtham
AU - Muñiz Martínez, Barbara A.
AU - Kolli, Chandra Sekhar Reddy
AU - Selamneni, Venkatarao
AU - Flores Salazar, Mario
AU - Sanchez, David Emanuel
AU - Carreno, Andres Fest
AU - Terrones, Mauricio
AU - De Luna Bugallo, Andres
AU - Sahatiya, Parikshit
N1 - Publisher Copyright:
© 2023 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
PY - 2023/10/1
Y1 - 2023/10/1
N2 - This work demonstrates the band-type engineering and the detailed charge transport mechanism upon visible light illumination for various configurations of vertically stacked monolayers of MoS2-ReS2grown by a two-step chemical vapour deposition method. In order to understand the stacking order of both materials has a direct impact on the band alignment arrangements, we investigate the optical properties of both ReS2–MoS2stacking configurations using micro-photoluminescence and interestingly observed the change in the band alignment upon changing the stacking order (ReS2–MoS2and MoS2–ReS2). The formation of the vertically stacked heterostructure is further validated by observing its morphology by HR-TEM. The MoS2on top of ReS2yielded Type II and ReS2on top of MoS2yielded type I band alignment. The fabricated photodetector exhibits responsivities of 152 A W−1for pristine ReS2, 72 A W−1for MoS2on top, and 400 A W−1for ReS2on top respectively for visible light illumination of 554 nm suggesting that the stacking configuration of the monolayer TMDs play a vital role in the performance of the optoelectronic properties. The detailed study of such configurations of vertically stacked 2D heterostructure is essential to better understand the optimal configuration for the development of highly responsive photodetectors.
AB - This work demonstrates the band-type engineering and the detailed charge transport mechanism upon visible light illumination for various configurations of vertically stacked monolayers of MoS2-ReS2grown by a two-step chemical vapour deposition method. In order to understand the stacking order of both materials has a direct impact on the band alignment arrangements, we investigate the optical properties of both ReS2–MoS2stacking configurations using micro-photoluminescence and interestingly observed the change in the band alignment upon changing the stacking order (ReS2–MoS2and MoS2–ReS2). The formation of the vertically stacked heterostructure is further validated by observing its morphology by HR-TEM. The MoS2on top of ReS2yielded Type II and ReS2on top of MoS2yielded type I band alignment. The fabricated photodetector exhibits responsivities of 152 A W−1for pristine ReS2, 72 A W−1for MoS2on top, and 400 A W−1for ReS2on top respectively for visible light illumination of 554 nm suggesting that the stacking configuration of the monolayer TMDs play a vital role in the performance of the optoelectronic properties. The detailed study of such configurations of vertically stacked 2D heterostructure is essential to better understand the optimal configuration for the development of highly responsive photodetectors.
UR - https://www.scopus.com/pages/publications/105018451515
UR - https://www.scopus.com/inward/citedby.url?scp=105018451515&partnerID=8YFLogxK
U2 - 10.1088/2053-1583/acf945
DO - 10.1088/2053-1583/acf945
M3 - Article
AN - SCOPUS:105018451515
SN - 2053-1583
VL - 10
JO - 2D Materials
JF - 2D Materials
IS - 4
M1 - 045032
ER -