Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon

A. Agrawal; J. Lin; B. Zheng; S. Sharma; S. Chopra; K. Wang; A. Gelatos; S. Mohney; S. Datta

Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10^-9 ω-cm² using ultrathin TiO _2-x interlayer between metal and silicon

A. Agrawal, J. Lin, B. Zheng, S. Sharma, S. Chopra, K. Wang, A. Gelatos, S. Mohney, S. Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO_2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO_2-x interlayer (T_Ins). Ti/TiO_2-x/n+ Si contact achieves a record low specific contact resistivity (ρ_c) of 9.1×10^-9ω-cm ².The modeling of ρ_c suggests tunneling mass, m*_Tunnel, of 0.7m₀ for TiO_2-x compared to stoichiometric TiO₂ indicating transition from an insulator to a wide gap semiconductor.

Original language	English (US)
Title of host publication	2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
Pages	T200-T201
State	Published - 2013
Event	2013 Symposium on VLSI Technology, VLSIT 2013 - Kyoto, Japan Duration: Jun 11 2013 → Jun 13 2013

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2013 Symposium on VLSI Technology, VLSIT 2013
Country/Territory	Japan
City	Kyoto
Period	6/11/13 → 6/13/13

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Agrawal, A., Lin, J., Zheng, B., Sharma, S., Chopra, S., Wang, K., Gelatos, A., Mohney, S., & Datta, S. (2013). Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10^-9 ω-cm² using ultrathin TiO _2-x interlayer between metal and silicon. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers (pp. T200-T201). Article 6576652 (Digest of Technical Papers - Symposium on VLSI Technology).

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abstract = "Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9ω-cm 2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.",

author = "A. Agrawal and J. Lin and B. Zheng and S. Sharma and S. Chopra and K. Wang and A. Gelatos and S. Mohney and S. Datta",

year = "2013",

language = "English (US)",

isbn = "9784863483477",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "T200--T201",

booktitle = "2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers",

note = "2013 Symposium on VLSI Technology, VLSIT 2013 ; Conference date: 11-06-2013 Through 13-06-2013",

}

Agrawal, A, Lin, J, Zheng, B, Sharma, S, Chopra, S, Wang, K, Gelatos, A, Mohney, S & Datta, S 2013, Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10^-9 ω-cm² using ultrathin TiO _2-x interlayer between metal and silicon. in 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers., 6576652, Digest of Technical Papers - Symposium on VLSI Technology, pp. T200-T201, 2013 Symposium on VLSI Technology, VLSIT 2013, Kyoto, Japan, 6/11/13.

Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10^-9 ω-cm² using ultrathin TiO _2-x interlayer between metal and silicon. / Agrawal, A.; Lin, J.; Zheng, B. et al.
2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. p. T200-T201 6576652 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

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AU - Agrawal, A.

AU - Lin, J.

AU - Zheng, B.

AU - Sharma, S.

AU - Chopra, S.

AU - Wang, K.

AU - Gelatos, A.

AU - Mohney, S.

AU - Datta, S.

PY - 2013

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AB - Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9ω-cm 2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.

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Agrawal A, Lin J, Zheng B, Sharma S, Chopra S, Wang K et al. Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10^-9 ω-cm² using ultrathin TiO _2-x interlayer between metal and silicon. In 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. 2013. p. T200-T201. 6576652. (Digest of Technical Papers - Symposium on VLSI Technology).