BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.

J. Ruzyllo; J. Stach

doi:10.1109/iedm.1980.189958

BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.

J. Ruzyllo, J. Stach

Materials Research Institute (MRI)

Research output: Contribution to journal › Conference article › peer-review

Abstract

The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.

Original language	English (US)
Pages (from-to)	795-796
Number of pages	2
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1980.189958
State	Published - 1980
Event	Tech Dig Int Electron Devices Meet - Washington, DC, USA Duration: Dec 8 1980 → Dec 10 1980

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/iedm.1980.189958

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title = "BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.",

abstract = "The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.",

author = "J. Ruzyllo and J. Stach",

year = "1980",

doi = "10.1109/iedm.1980.189958",

language = "English (US)",

pages = "795--796",

journal = "Technical Digest - International Electron Devices Meeting",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Tech Dig Int Electron Devices Meet ; Conference date: 08-12-1980 Through 10-12-1980",

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AU - Stach, J.

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AB - The Lateral MIS Tunnel Transistor (LMISTT) is a transistor structure which exploits the combined properties of lateral MIS tunnel structures and non-equilibrium MIS tunnel diodes. Due to its features the LMISTT offers possibilities in a variety of applications including very large scale integrated high speed IC's. In this work the various aspects of design and processing of this device are discussed in relation to its basic properties and performance.

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AN - SCOPUS:0019269224

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Tech Dig Int Electron Devices Meet

Y2 - 8 December 1980 through 10 December 1980

ER -

BASIC PROPERTIES OF LATERAL MIS TUNNEL TRANSISTOR.

Abstract

All Science Journal Classification (ASJC) codes

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